Search results for " Graphene microwave transistors"
showing 3 items of 3 documents
Radiofrequency performances of different Graphene Field Effect Transistors geometries
2016
In this work, we investigated on microwave parameters geometry dependence in Graphene Field Effect Transistors (GFETs). A DC and RF characterization of the fabricated GFETs has been performed. The parametric analysis was carried out on 24 GFET families fabricated on the same chip and differing only for the channel length (Δ) and the gate length (Lg). In order to obtain a statistical average, each family included ten devices with the same geometry.Our study demonstrates that the output resistance and the cut-off frequency depend on both Δ and Lg. As expected, Rout increases with the graphene channel surface thus confirming the good quality of the fabrication procedures. An optimum region whi…
Fabrication and analysis of the layout impact in Graphene Field Effect Transistors (GFETs)
2016
In this work we focused on the analysis of Graphene Field Effect Transistor (GFET) microwave parameters dependence on geometries. In particular, a statistical, experimental investigation of the cut-off frequency (ft) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families on the same chip were fabricated, each one made of 10 identical (same geometry) devices. The analysis of the measured data shows that ft is both Δ and Lg dependent, and that there exists an optimal region in Δ and Lg design space.
Impact of GFETs geometries on RF performances
2016
Graphene is a relatively new material whose unique properties have attracted significant interest for its use in electronic and photonic applications. In particular, field effect has been proved in graphene samples and the observed high carrier mobility makes graphene an interesting solution for high frequency electronics. In this work, we focused on the analysis of microwave parameters dependence on geometries in Graphene Field Effect Transistors (GFETs). In particular, a statistical, experimental investigation of the cut-off frequency (fT) and of the output impedance (Zout) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families wer…